2sba42 0.2 a, 310 v npn plastic encapsulated transistor elektronische bauelemente 15-nov-2012 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 1 base 3 emitter collector 2 4 rohs compliant product a suffix of -c specifies halogen & lead-free features the 2sba42 is designed for applications as a video output to drive color crt, or as a dialer circuit in elect ronics telephone. marking package information package mpq leader size sot-89 1k 13 inch absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo 310 v collector-emitter voltage v ceo 305 v emitter-base voltage v ebo 5 v collector current -continuous i c 0.2 a collector current -pulsed i cm 0.5 a collector power dissipation p d 0.5 w thermal resistance from junction to ambient r ja 250 c / w junction & storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage v (br)cbo 310 - - v i c =100 a, i e =0 collector-emitter breakdown voltage v (br)ceo 305 - - v i c =1ma, i b =0 emitter-base breakdown voltage v (br)ebo 5 - - v i e =100 a, i c =0 collector cut-off current i cbo - - 0.25 a v cb =200v, i e =0 collector cut-off current i ceo - - 0.25 a v ce =200v, i b =0 - - 5 v ce =300v, i b =0 emitter cut-off current i ebo - - 0.1 a v eb =5v, i c =0 dc current gain h fe(1) 60 - - v ce =10v, i c =1ma h fe(2) 100 - 300 v ce =10v, i c =10ma h fe(3) 75 - - v ce =10v, i c =30ma collector-emitter saturation voltage v ce(sat) - - 0.2 v i c =20ma, i b =2ma base-emitter saturation voltage v be(sat) - - 0.9 v i c =20ma, i b =2ma transition frequency f t 50 - - mhz v ce =20v, i c =10ma, f=30mhz ref. millimeter ref. millimeter min. max. min. max. a 4.4 0 4.6 0 g 0.40 0.58 b 3 . 94 4.25 h 1.50 typ c 1.40 1.60 j 3.00 typ d 2.30 2.60 k 0.32 0.52 e 1.50 1.70 l 0.35 0.44 f 0.89 1.20 sot-89 a e c d b k h f g l j 1 2 3 4 a42
|
